1 sot? 23 leshan radio comp any, ltd. s-ln2308lt1g 1 ordering information device marking shipping 3000/tape& reel 10000/tape& reel 2 3 ln2308lt1g ln2308lt3g n08 n08 60v n-cha nnel enhancement-mode mosfet p arameter symbol limit unit d rain-source voltage v d ss 60 v g ate-source voltage v g ss 20 v c ontinuous drain current(tj=150 ) t a = 25 i d 2 .6 a t a = 70 1.8 p ulsed drain current i d m 8 m aximum body-diode continuous current i s 1.6 a m aximum power dissipation t a = 25 p d 0.7 w t a = 70 0.45 o perating junction temperature t j 150 m aximum junction-to-ambient r thja t Q 10 sec 150 /w s teady state 175 t hermal resistance-junction to case r jc 120 /w a bsolute maximum ratings (t a =25 unless otherwise noted) * the device mounted on 1in 2 f r4 board with 2 oz copper fea tures r ds(on) Q 100m ? @v gs =10 v r ds(on) Q 130m ? @v gs =4.5 v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability capable doing cu wire bonding applications power management in note book portable equipment battery powered system load switch dsc 2 3 rev.o 1/5 ln2308lt1g s-ln2308lt1g s-ln2308lt3g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio comp any, ltd. ln2308lt1g , s-ln2308lt1g sy mbol parameter limit min t yp max unit st atic bv dss drai n-source breakdown voltage v gs= 0, i d =25 0 a 60 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 1 3 v i gss gate body leakage v ds =0v , v gs =20v 100 na i dss zero gate voltage drain current v ds =60v , v gs =0v 1 a v gs =1 0v, i d = 2.6a 82 100 r ds(on) drai n-source on-resistance v gs = 4.5v, i d = 2.1a 96 130 m ? v sd diode forward voltage i s = 1.0a, v gs =0v 0.8 1.2 v dyn amic qg t otal gate charge v ds =30v , v gs =10 v, i d =2. 6a 12 qg total gate charge 6.5 qgs gate-so urce charge 2.2 qgd gate-drain charge v ds =30v , v gs = 4.5v, i d =2. 6a 2.7 nc ciss input capacitance 350 co ss output capacitance 40 cr ss reverse transfer capacitance v ds =30v , v gs = 0v, f=1mhz 12 pf rg gat e resistance v ds =0v , v gs = 0v, f=1mhz 0.7 t d(on) tu rn-on delay time 10 t r tu rn-on rise time 11 t d(of f) tu rn-off delay time 29 t f tu rn-off fall time v dd =20v , r l =20 i d =1a , v gen =10v r g =1 3 ns note s: pulse test; pulse width Q 300us, duty cycle Q 2%. electrical characteristics (t a =2 5 unless otherwise specified) rev.o 2/5
leshan radio comp any, ltd. t ypical characteristics (t a =25 noted) rev.o 3/5 ln2308lt1g , s-ln2308lt1g
leshan radio comp any, ltd. t ypical characteristics (t a =25 noted) rev.o 4/5 ln2308lt1g , s-ln2308lt1g
no tes: 1 . dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 s ot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio comp any, ltd. rev.o 5/5 ln2308lt1g , s-ln2308lt1g
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